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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiOx/Si
XPS Formula:
Si*Ox
Name:
silicon oxides/silicon
CAS Registry No:
11126-22-0
Class:
anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Schleich B., Schmeisser D., Gopel W.
Journal:
Surf. Sci. 191, 357
DOI:
Pub Year:
1987

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p3/2
Binding Energy (eV)
103.30
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Si(111) (p-type, boron doped with 6 Ohm cm resistivity) crystals covered with native oxide (thickness, d=2nm). Coverages were monitored by a quartz crystall oscillator.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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