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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
N
Formula:
SiN0.35
XPS Formula:
Si*N0.05
Name:
silicon nitride (SiN0.35)
CAS Registry No:
Class:
IV-VI semiconductor, nitride

Citation:
Author Name(s):
Ingo G.M., Zacchetti N.
Journal:
High Temperature Science 28, 137
Pub Year:
1990

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV)
396.97
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
0.98
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Argon
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:
The amorphous SiNx alloys are obtained by means of the Dual Beam Sputtering technique.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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