Tab Page Summary
aluminum gallium arsenide (Al0.3Ga0.7As)
arsenide, III-V semiconductor
Hofmann A., Streubel P., Meisel A.
Anode Material:
other anode
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The samples were grown by liquid phase epitaxy on Te-doped GaAs (100).
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300