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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
La/Si
lanthanum/silicon
element, IV semiconductor, rare earth

Citation:
Puppin E., Guyot H., Shen Z.X., Hwang J., Lindau I.
Solid State Commun. 67, 23
Pub Year:
1988

Data Processing:
Chemical Shift

Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.2 ML La/Si(111). Clean Si(111) surfaces were prepared by cleaving of n-type (resistivity is 36 Ohm cm) single crystal silicon. The amount of deposited La was measured with a quartz microbalance.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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