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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
gallium stibnide
12064-03-8
II-VI semiconductor, III-V semiconductor, stibnide

Citation:
Franklin G.E., Rich D.H., Samsavar A., Hirchchorn E.S., Leibsle F.M.,Miller T., et al.
Phys. Rev. B 41, 12619
Pub Year:
1990

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
0.2
Calibration:
FL
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300

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