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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Sb
Formula:
GaSb
XPS Formula:
GaSb*
Name:
gallium stibnide
CAS Registry No:
12064-03-8
Class:
II-VI semiconductor, III-V semiconductor, stibnide

Citation:
Author Name(s):
Franklin G.E., Rich D.H., Samsavar A., Hirchchorn E.S., Leibsle F.M.,Miller T., et al.
Journal:
Phys. Rev. B 41, 12619
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-4d
Double Separation (eV)
1.25
Energy Uncertainty:
0.01
Background Subtraction Method:
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
1.0575
Lorentzian Width (eV):
0.24

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
0.2
Calibration:
FL
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type, Te-doped with a carrier density of 1.5E17 cm-3 GaSb(100)-(1x3) samples. Au foil in electrical contact with the sample was used for calibration. The samples were aligned by Laue diffraction to within 0.5 degree.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
High-energy Electron Diffraction
Specimen Temperature (K):
300
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