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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiOx/Si
XPS Formula:
SiO2/Si*
Name:
silicon oxides/silicon (CasNo:7440-21-3)
CAS Registry No:
7440-21-3
Class:
anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G.
Journal:
Phys. Rev. B 38, 6084
DOI:
Pub Year:
1988

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
99.34
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
0.28
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10-30 A SiO2/Si. The films were obtained by oxidizing atomically clean Si surfaces in pure O2. Thickness of the films was determined by ellipsometry and checked with transmission electron microscopy.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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