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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
SiO2/Si
Si 0 state.
silicon dioxide/silicon
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., Hollinger G.
Phys. Rev. B 38, 6084
Pub Year:
1988

Data Processing:
Doublet Separation for Photoelectron Lines
other type of curve fit

Measurement:
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
Calibration:
Other, Si2p = 99.34
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
10-30 A SiO2/Si. The films were obtained by oxidizing atomically clean Si surfaces in pure O2. Thickness of the films was determined by ellipsometry and checked with transmission electron microscopy.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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