Reliable (reported energy within 300 eV of a reference energy)
Comment:
Silicon was heated in vac. to 1323K to remove the native oxide layer and then cooling slowly to 300K. 0.35 ML (or 1E4 L) SiCl4/Si(111)-(7x7), n-doped with 1 Ohm cm resistivity. The energy is referenced to the bulk state of the Si2p line