NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ir

IrSi

Ir*Si

iridium silicide (IrSi)

CAS Registry No:

IV-VI semiconductor, silicide

Citation:

Author Name(s):

Wittmer M., Oelhafen P., Tu K.N.

Phys. Rev. B 33, 5391

Pub Year:

1986

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

4f_7/2

Binding Energy (eV)

60.70

Energy Uncertainty:

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

1.2

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Emission angle is 15 degrees.. Ir/Si films were prepared in 2 ways: 1)coevaporation Ir and Si in a dual e-beam system; 2)evaporation of Ir films. In films on Si(100) wafers, there was annealing in helium furnace at 673 K. Asymmetry parameter is 1.25 in both cases.

Specimen:

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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