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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
TaN0.07
Ta*N0.07
tantalum nitride (TaN0.07)
nitride

Citation:
Baba Y., Sasaki T.A., Takano I.
J. Vac. Sci. Technol. A 6, 2945
Pub Year:
1988

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The nitrogenation was carried out by bombarding the metal with 8-keV Ar+ ions in nitrogen at 1.0E-3 Pa. The approximate thickness of the TiN films obtained under these conditions was ~7 nm which is complete with to the range of the Ar+ ions.

Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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