NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

GaSb

gallium stibnide

CAS Registry No:

12064-03-8

II-VI semiconductor, III-V semiconductor, stibnide

Citation:

Author Name(s):

Olde J., Behrens K.M., Barnscheidt H.-P., Manzke R., Skibowski M.

Phys. Rev. B 44, 6312

Pub Year:

1991

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

3d_5/2

Binding Energy (eV)

18.87

Energy Uncertainty:

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

34

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type doped GaSb(001)-(2x3). The sample was cleaned by Ar+ ion bombardment (Ep = 800 eV, time = 3 h) and subsequently annealed (T = 763 K , time = 15 min). The spectra were recorded at normal emission.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

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