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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Cu23.4In26.5Se50.1/SiO2
copper indium selenium ss/silicon dioxide(Cu23.4In26.5Se50.1/SiO2)
chalcogenide, IV semiconductor, solid solution

Citation:
Kohiki S., Nishitani M., Negami T., Wada T.
Phys. Rev. B 45, 9163
Pub Year:
1992

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Ag = 84.00,368.27
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type CuInSe film with a conductivity of 4.0E-5 ohm-1 cm-1 was deposited onto quartz substrate at substrate temperatures ranging from 670 K to 770 K. Chalcopyrite structure. The composition was determined by EPMA and inductively coupled plasma-optical-em

Specimen:
Method of Determining Specimen Composition:
Electron-Probe Microanalysis
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300

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