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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Al
Formula:
Al0.6Ga0.4As
XPS Formula:
Al0.6Ga0.4As
Name:
aluminum gallium arsenide ss
CAS Registry No:
106804-30-2
Class:
arsenide, III-V semiconductor, solid solution

Citation:
Author Name(s):
Hofmann A., Streubel P., Meisel A.
Journal:
Vacuum 41, 1728
DOI:
Pub Year:
1990

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
73.70
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other anode
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The surface was cleaned by chemical etching in an ammonia solution and by cycles of Ar+ ion bombardment (Ep = 400 eV, Ip = 4 micro ampere, time = 30 min) and annealing (T = 670 K, time = 30 min).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Electron-Probe Microanalysis, X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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