NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

N₂/Rb/GaAs

gallium atoms in GaN

nitrogen/rubidium/gallium arsenide

CAS Registry No:

Class:

arsenide, III-V semiconductor, nitride

Citation:

Author Name(s):

Soukiassian P., Starnberg H.I., Kendelewicz T.

Journal:

Appl. Surf. Sci. 56, 772

DOI:

Pub Year:

1992

book All Records in this Publication

Data Processing:

Chemical Shift

CS-3d

1.00

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

4E4 L N2/1.8 ML Rb/GaAs(110). The energy is referenced to the bulk state of the Ga3d line.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300