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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
TaSi2Ox
Ta*Si2Ox
tantalum silicon oxides
IV-VI semiconductor, non-stoichiometric oxide

Citation:
Thomas III J.H., Hammer L.H.
J. Electrochem. Soc. 136, 2004
Pub Year:
1989

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu=84.00,932.67, Pd3d5=335.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with three-point correction of energy scale
Comment:
Tantalum silicide was deposited on polysilicon on silicon-on-sapphire wafers by cosputtering from a tantalum rich target to a thickness of 200 nm. The stoichiometry of the tantalum silicide was determined by RBS.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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