Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E0-1E9 L O2/Te-doped Al0.6Ga0.4As. The AlGaAs was cleaned by chemical etching in an ammonia solution and by cycles of Ar+ ion bombardment (Ep = 400 eV, Ip = 4 microamperes, time = 30 min) and annealing (T = 670 K, time = 30 min).