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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/GaAs
oxygen/gallium arsenide
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Kroll G.H., Ohno T.R., Weaver J.H.
Appl. Phys. Lett. 58, 2249
Pub Year:
1991

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
20 L O2/n-type Si-doped GaAs(110) with a carrier concentration of 6E17 cm-3. The energy is referenced to the bulk state of the As3p3/2 line. Emission angle = 69 degrees.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
20

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