NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

O₂/GaAs

oxygen/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Kroll G.H., Ohno T.R., Weaver J.H.

Appl. Phys. Lett. 58, 2249

Pub Year:

1991

book All Records in this Publication

Data Processing:

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV)

0.90

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

20 L O2/n-type Si-doped GaAs(110) with a carrier concentration of 6E17 cm-3. The energy is referenced to the bulk state of the Ga2p3/2 line. Emission angle = 69 degrees.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

20

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