NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Mo/Si

molybdenum/silicon

7439-98-7

element

Citation:

Author Name(s):

Slaughter J.M., Shapiro A., Kearney P.A., Falco C.M.

Journal:

Phys. Rev. B 44, 3854

DOI:

Pub Year:

1991

book All Records in this Publication

Data Processing:

Photoelectron Line

3d_5/2

227.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Other, Si2p = 99.34

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

15 A Mo/Si. The wafer was heated to 1123 K and then a 100-A-thick buffer layer of homoepitaxial Si was grown at 1073 K.

Specimen:

Method of Determining Specimen Composition:

Rutherford Backscattering Spectrometry

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300