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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Si/Mo
silicon/molybdenum
element

Citation:
Slaughter J.M., Shapiro A., Kearney P.A., Falco C.M.
Phys. Rev. B 44, 3854
Pub Year:
1991

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
15.5 A Mo/Si. The wafer was heated to 1123 K and then a 100-A-thick buffer layer of homoepitaxial Si was grown at 1073 K.

Specimen:
Method of Determining Specimen Composition:
Rutherford Backscattering Spectrometry
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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