NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

germanium

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Yang X., Cao R., Terry J., Pianetta P.

Journal:

J. Vac. Sci. Technol. B 10, 2013

DOI:

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV)

0.58

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

62.5

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The clean Ge(100) surface was prepared by a 1073 K anneal. Peak locations: Voigt function. Branching ratio = 0.67.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300