Tab Page Summary
aluminum arsenide/gallium arsenide
arsenide, III-V semiconductor
Bratina G., Sorba L., Antonini A., Vanzetti L., Franciosi A.
J. Vac. Sci. Technol. B 9, 2225
Overall Energy Resolution (eV):
0.69
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
A 200 A AlAs film was grown on GaAs(001) at 893 K. RHEED pattern was 3x1. Emission angle = 55 degrees.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300