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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/Y/Si
oxygen/yttrium/silicon
IV semiconductor, non-stoichiometric oxide, oxide, rare earth

Citation:
Mesarwi A., Ignatiev A.
Surf. Sci. 244, 15
Pub Year:
1991

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E5 L O2/0.6 ML, 1 ML, 2.5 ML, and 5.2 ML Y/Si(100), p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by cycles of Ar+ ion bombardment (Ep = 1 keV, j = 5 microamperes cm-2, time = 30 min) and annealing (T = 1123 K, time = 5 min) by in

Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
773

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