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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si/GaAsOx/GaAs
XPS Formula:
SiO2
Name:
silicon/gallium arsenide oxides/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Cuberes M.T., Sacedon J.L.
Journal:
Surf. Sci. 251, 92
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p
Chemical Shift (eV)
3.40
Energy Uncertainty:
Background Subtraction Method:
Linear
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1.6, 3.2 and 10 A Si/5.2 A GaAsOx /Si-doped GaAs(100). GaAsOx was grown by electron stimulated oxidation on GaAs(100). There was a state of pure Si in the spectrum. The thickness was determined by XPS.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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