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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Tm/Si
XPS Formula:
bulk state
Name:
thulium/silicon
CAS Registry No:
Class:
element, lanthanide, rare earth, silicide

Citation:
Author Name(s):
Gokhale S., Mahamuni S., Joshi K., Nigavekar A.S., Kulkarni S.K.
Journal:
Surf. Sci. 257, 157
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
99.00
Energy Uncertainty:
0.1
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
65 A and 125 A Tm/p-Si(111). The Si wafer was cleaned by Ar+ ion bombardment and subsequently annealed (T = 1100 K). The total FWHM is 1.3 eV. The intensity ratio of the Gaussian/Lorentzian components was 80/20. The thickness was measured using a quartz-

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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