NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Cossu G., Ingo G.M., Mattogno G., Padeletti G., Proietti G.M.

Journal:

Appl. Surf. Sci. 56, 81

DOI:

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Auger-Electron Line

L₃M₄₅M₄₅(¹G)

1065.80

0.1

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with two-point correction of energy scale

Comment:

GaAs(100). For calibration, the CuL3M45M45 transition at 567.97 eV was also used.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300