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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Si/Ir
silicon bulk state
silicon/iridium
element, silicide

Citation:
Morgan S.J., Williams R.H., Mooney J.M.
Appl. Surf. Sci. 56, 493
Pub Year:
1992

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.7
Calibration:
Pt4f7 = 71.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
7 A Ir/p-type Si(100)-(2x1) with a resistivity of 3 ohm cm. The substrate was cleaned by annealing (T =1023 K, time = 20 min). The thickness was measured using a quartz-crystal thickness monitor. Peak locations: Voigt function.

Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
623, 823

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