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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
GaAsOx/GaAs
As(V) species
gallium arsenide oxides/gallium arsenide
arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Lu Z., Schmidt M.T., Osgood R.M., Jr, Holber W.H., Podlesnik D.V.
J. Vac. Sci. Technol. A 9, 1040
Pub Year:
1991

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5 A GaAsOx/n-type GaAs(100). The oxide was formed by using 192-nm excimer laser. The energy is referenced to the bulk state of the As2p3/2 line.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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