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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
Si/GaAsOx/GaAs
XPS Formula:
Ga2O3
Name:
silicon/gallium arsenide oxides/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Cuberes M.T., Sacedon J.L.
Journal:
Surf. Sci. 251, 92
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p3/2
Chemical Shift (eV)
0.90
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
3.2 A Si/5.2 A GaAsOx/Si-doped GaAs(100). The GaAsOx was grown by electron stimulated oxidation on GaAs(100). The energy is referenced to the bulk state of the Ga3d line. The thickness was measured by XPS.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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