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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
Sm/GaAs
Name:
samarium/gallium arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, III-V semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Komeda T., Anderson S.G., Seo J.M., Schabel M.C., Weaver J.H.
Journal:
J. Vac. Sci. Technol. A 9, 1964
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-3d
Surface Core-Level Shift (eV)
-0.36
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
90
Overall Energy Resolution (eV):
0.25
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.13, 0.33, 0.67 ML Sm were deposited onto n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3 at 20 K. Peak locations: Doniach - Sunjic & Gaussian.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
20
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