Tab Page Summary
arsenide, II-VI semiconductor, III-V semiconductor
Komeda T., Anderson S.G., Seo J.M., Schabel M.C., Weaver J.H.
J. Vac. Sci. Technol. A 9, 1964
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.25
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3). Peak locations: Doniach - Sunjic & Gaussian.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
20, 300