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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/InP
oxygen/indium phosphide
22398-80-7
III-V semiconductor, non-stoichiometric oxide, oxide, phosphide

Citation:
Dai D., Zhu F.
Phys. Rev. B 43, 4803
Pub Year:
1991

Data Processing:
Chemical Shift

Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E8 L O2/n-type InP(111)-(1x1) with a carrier concentration of 6E17 cm-3. The chemical shift is relative to the pure InP. The InP was bombarded by Ar+ ions and annealed (T = 623 K). The spectra were recorded at normal emission.

Specimen:
Method of Determining Specimen Composition:
Auger Electron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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