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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAs0.13O2.1
XPS Formula:
As(III) state
Name:
gallium arsenic oxide (GaAs0.13O2.1)
CAS Registry No:
Class:
arsenic, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Hollinger G., Skheyta - Kabbani R., Gendry M.
Journal:
Phys. Rev. B 49, 11159
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d
Chemical Shift (eV)
2.91
Energy Uncertainty:
0.3
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Ag = 84.00,368.27
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The oxide was formed using a constant flow of 101325 Pa of O2 at 623 K for 2 h. The intensity ratio of As(V)/As(III) components was 0.41. The interfacial As layer thickness was 3.0 A. The thickness was measured by ellipsometry. The chemical shift is relative to the substrate atoms.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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