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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
GaAsOx/GaAs
Ga(III) state
gallium arsenide oxides/gallium arsenide
arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Jimenez I., Palomares F.J., Sacedon J.L.
Phys. Rev. B 49, 11117
Pub Year:
1994

Data Processing:
Chemical Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
126.10
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Electron-stimulated oxidation (Ep = 150 eV) of Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1). The energy is referenced to the bulk state of the Ga3d5/2 line. The Gaussian FWHM represents the intrinsic value, not including the experimental resolution. The oxide thickness was ~8 A.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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