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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAsOx/GaAs
XPS Formula:
As(V) state
Name:
gallium arsenide oxides/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Jimenez I., Palomares F.J., Sacedon J.L.
Journal:
Phys. Rev. B 49, 11117
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d5/2
Chemical Shift (eV)
4.50
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
1.30
Lorentzian Width (eV):
0.17

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
126.10
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Electron-stimulated oxidation (Ep = 150 eV) of Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1). The energy is referenced to the bulk state of the As3d5/2 line. The Gaussian FWHM represents the intrinsic value, not including the experimental resolution. The oxide thickness was ~8 A.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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