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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/GaAs
reacted state
oxygen/gallium arsenide
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Mesarwi A., Ignatiev A.
Surf. Sci. 282, 371
Pub Year:
1993

Data Processing:
Chemical Shift

Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1.5E5 L O2 were adsorbed onto GaAs(100) at 673 K. The energy is referenced to the bulk state of the As3d line. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV) and annealing (T = 723 K).

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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