Tab Page Summary
II-VI semiconductor, III-V semiconductor, stibnide
Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
mixed Gaussian/Lorentzian
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5000 A GaSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. Peak locations: Voigt function.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300