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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Si/GaAs
silicon/gallium arsenide
arsenide, element, III-V semiconductor

Citation:
Chambers S.A., Loebs V.A.
Phys. Rev. B 47, 9513
Pub Year:
1993

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
0.73
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
40 A Si/n-type Si-doped GaAs(001)-(2x4) with a carrier concentration of 5E17 cm-3. The spectra were recorded at normal emission. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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