NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

Si/GaAs

silicon/gallium arsenide

CAS Registry No:

7440-21-3

arsenide, element, III-V semiconductor

Citation:

Author Name(s):

Chambers S.A., Loebs V.A.

Phys. Rev. B 47, 9513

Pub Year:

1993

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

2p

Binding Energy (eV)

99.99

Energy Uncertainty:

0.02

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

0.73

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

80 A n-type As-doped Si with a carrier concentration of 5E17 cm-3 were grown on n-type Si-doped GaAs(001)-(2x4) with a carrier concentration of 5E17 cm-3. The spectra were recorded at normal emission. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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