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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
GaAs
Name:
gallium(III) arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Chambers S.A., Loebs V.A.
Journal:
Phys. Rev. B 47, 9513
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
18.81
Energy Uncertainty:
0.04
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
0.73
Calibration:
FL = Fermi level
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type Si-doped GaAs(001)-(2x4) with a carrier concentration of 5E17 cm-3. Branching ratio = 0.65.The intensity ratio of the Gaussian/Lorentzian components was 60/40. The As cap was desorbed by heating at ~723 K for several minutes. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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