NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

XPS Formula:

rest atoms in the (₇x₇) reconstruction

Name:

silicon

CAS Registry No:

7440-21-3

Class:

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Weitering H.H., Chen J., DiNardo N.J., Plummer E.W.

Journal:

Phys. Rev. B 48, 8119

DOI:

Pub Year:

1993

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-2p_3/2

Surface Core-Level Shift (eV) for the second Layer of Atoms

-0.76

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.55

Lorentzian Width (eV):

0.150

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

120

Overall Energy Resolution (eV):

0.5

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Lightly doped n-type Si(111)-(7x7) with a resistivity of 1 ohm cm. Branching ratio = 0.5. The relative intensity was 0.04.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

77, 300