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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
TiSi2
titanium disilicide
12039-83-7
II-VI semiconductor, silicide

Citation:
Engquist J., Jansson U.
Thin Solid Films 263, 54
Pub Year:
1995

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The TiSi2 film with a thickness of 5000 A and a resistivity of 15 microohm cm was deposited on B-doped Si(100) with a resistivity of 6.8 - 9.2 ohm cm.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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