Tab Page Summary
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide
Kaul P., Schutze A., Kohl D., Brauers A., Weyers M.
J. Cryst. Growth 123, 411
Overall Energy Resolution (eV):
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
4.5E8 L O2/GaAs(100). Adsorption of O2 was performed at 200 mbar for 5 min at 470, 570 and 670 K and at 200 mbar for 30 min at 570 K.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300