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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
K2.8C60/GaAs
octahedral sites
potassium carbon/gallium arsenide (K2.8C60/GaAs)
alkali

Citation:
Poirier D.M., Ohno T.R., Kroll G.H., Benning P.J., Stepniak F., Weaver J.H., et al.
Phys. Rev. B 47, 9870
Pub Year:
1993

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
0.6
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
K2.8C60/n-type GaAs(110). The 130 A C60 sample was grown and doped with K at ~ 460 K with subsequent annealing (T = ~ 480 K, time = 15 - 20 min). The thickness was measured using a quartz-crystal thickness monitor. LEED (1x1) pattern. Fcc structure.

Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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