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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
In
Formula:
O2/InP
Name:
oxygen/indium phosphide
CAS Registry No:
22398-80-7
Class:
III-V semiconductor, non-stoichiometric oxide, oxide, phosphide

Citation:
Author Name(s):
Dai D., Zhu F.
Journal:
Phys. Rev. B 43, 4803
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-4d
Chemical Shift (eV)
0.25
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
2.04
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1E10 - 1E13 L O2/n-type InP(111)-(1x1) with a carrier concentration of 6E17 cm-3. The chemical shift is relative to the pure InP. The InP was bombarded by Ar+ ions and subsequently annealed (T = 623 K). Emission angle = 50 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Auger Electron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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