Reliable (reported energy within 300 eV of a reference energy)
Comment:
4 A Si/~ 8 A GaAsOx/GaAs(110)-(1x1). Electron-stimulated oxidation (Ep = 150 eV) of Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1). The energy is referenced to the bulk state of the As3d line. The Gaussian FWHM represents the intrinsic value, not including the experimental resolution.