Tab Page Summary
arsenide, II-VI semiconductor, III-V semiconductor
Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.
J. Vac. Sci. Technol. A 12, 1170
Doublet Separation for Photoelectron Lines
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.35
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. Branching ratio = 0.66.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300