There was a problem with the connection!
menu
NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Summary Page
Tab Page Summary
General:
Element:
As
Formula:
GaAs
Name:
gallium(III) arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, II-VI semiconductor, III-V semiconductor
Citation:
Author Name(s):
Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.
Journal:
J. Vac. Sci. Technol. A 12, 1170
DOI:
10.1116/1.579290
Pub Year:
1994
book
All Records in this Publication
Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-3d
5/2
Surface Core-Level Shift (eV)
0.40
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.30
Lorentzian Width (eV):
0.17
Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
126.10
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. Branching ratio = 0.66.
Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
Go Back
Home
search
Identify Unknown Spectral Lines
search
Retrieve Data for Elements
keyboard_arrow_down
Selected Spectral Type and Element
Reference Data
search
Retrieve Data for Compounds
keyboard_arrow_down
Elemental Composition
Chemical Name
Chemical Classes
Data for One Element
assessment
Plots
keyboard_arrow_down
Wagner Plot
Chemical Shifts
search
Search Scientific Citations
assignment
More Options
keyboard_arrow_down
Introduction
Data Field Definitions
Citation
Contact
Version History
Acknowledgement
Disclaimer
An error has occurred. This application may no longer respond until reloaded.
Reload
🗙