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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
O2/GaAs
XPS Formula:
metal state
Name:
oxygen/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.
Journal:
J. Vac. Sci. Technol. A 12, 1170
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d5/2
Chemical Shift (eV)
0.45
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.45
Lorentzian Width (eV):
0.17

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
126.10
Overall Energy Resolution (eV):
0.35
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
~1E4 L O2/n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. The thickness of the native oxide was 9 A. Branching ratio = 0.66. The chemical shift is relative to the pure GaAs.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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